A HfO_2/Al_2O_3 bilayer structure for a two-terminal ReRAM device with the intention of having multiple resistance states as a function of compliance current (CC) after forming was evaluated Reduced power consumption was observed when the Al_2O_3 buffer layer was placed between the top electrode and the HfO_2 layer as compared to when it is embedded between the HfO_2 layer and the bottom electrode. Gradual resistance change capability was observed with varying CC The switching power requirement increases even if the Al_2O_3 buffer layer thickness was decreased when the buffer layer was near the bottom electrode. It was demonstrated that by modifying the deposition process of the top metal layer, the switching energy requirement could be altered.
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