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The Effect of Deposition Time on the Voltage Range and Sensitivity of Cu/Ni as Low-Temperature Sensor Resulted from Electroplating Assisted by a Transverse Magnetic Field

机译:沉积时间对Cu / Ni的电压范围和灵敏度的影响,作为低温传感器由横向磁场辅助的电镀导致

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The Cu/Ni thin film as low-temperature sensor was produced by electroplating on the various deposition times assisted with a 200G magnetic field in the transverse direction to the surface of Cu. The deposition time was varied from 0 to 45s. The liquid nitrogen (LN2) 0°C to -200°C was used as a tested low-temperature medium. The characterization was done on the voltage range and sensitivity. Cu/Ni sensor from deposition within 25s has the largest voltage range that is 128.48 mV and has the sensitivity (S) that has a linear relationship with temperature (7) according to S(T) = 0.287 - 0.0027.
机译:通过在辅助方向上的200g磁场的各种沉积时间上电镀在横向上的各种沉积时间上通过电镀来制造Cu / Ni薄膜作为低温传感器。 沉积时间从0到45s变化。 将液氮(LN2)0℃至-200℃用作测试的低温培养基。 表征在电压范围和灵敏度上完成。 Cu / Ni传感器在25s内的沉积中具有128.48mV的最大电压范围,并且具有根据S(t)的温度(7)具有线性关系的灵敏度= 0.287-0.0027。

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