Josephson current in silicene-based SBS Josephson junction: Effect of perpendicular electric field

摘要

The Josephson effect in silicene-based superconductor/barrier/superconductor (SBS) junction is theoretically investigated by the Dirac-Bogoliubov-de Gennes equation, where superconductors are the proximity effect through superconducting gates and a thick barrier is the presence of a perpendicular electric field and an electrostatic gate. The influence of electric field is used for inducing a bandgap in monolayer silicene. We find that the Josephson current is controlled by the effect of electric field E_Z. The behavior of critical current I_C on the perpendicular electric fields is linear dependence at case of V_G = 0. The gate control of electric field is led to the linear slope d(I_C/I_0)/dlE_Z as revealed to 1/E_F and -1/E_F in the different direction of electric fields. In addition, the linear dependence of the Josephson current is considered by the electrostatic gate V_G. The appearance of linear effect in the tunable barrier is near the bottom of conduction band and the top of valence band. These results are suitable for controlling the Josephson current in silicene-based junction.