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Josephson transistor of the field-effect type and method of manufacturing a Josephson junction

机译:场效应型的约瑟夫森晶体管和制造约瑟夫森结的方法

摘要

The invention relates to Josephson devices. …??A Josephson transistor of the field-effect type comprises a source electrode 3 and a drain electrode 4 which are separated by a space, a tunnel-effect layer 6 formed on a lateral wall of the space between the source and drain electrodes, a substrate electrode 8 in series with the tunnel-effect layer, and a gate electrode 5 which is intended to control by field effect the tunnel-effect current which passes through the tunnel-effect layer. …??Application to the construction of integrated circuits. …IMAGE…
机译:本发明涉及约瑟夫森装置。 …………………………………………………………………………………………………………………………………………………………………………(结果)的“约瑟夫森”型的场效应晶体管。电极,与隧道效应层串联的衬底电极8,以及旨在通过场效应控制流过隧道效应层的隧道效应电流的栅电极5。 …在集成电路构造中的应用。 …<图像>…

著录项

  • 公开/公告号FR2638569A1

    专利类型

  • 公开/公告日1990-05-04

    原文格式PDF

  • 申请/专利权人 SEIKO EPSON CORP;

    申请/专利号FR19890013548

  • 发明设计人 SEIICHI IWAMATSU;

    申请日1989-10-17

  • 分类号H01L39/22;

  • 国家 FR

  • 入库时间 2022-08-22 06:09:21

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