Massive metrology and inspection solution for EUV by Area Inspection SEM with Machine Learning technology

摘要

As the development of Extreme Ultraviolet Lithography (EUVL) is progressing toward the sub-10nm generation, the process window becomes very tight. In this situation, local Critical Dimension (CD) variability including stochastic defect directly affects the yield loss, and it is very important to inspect/measure all patterning area of interest on chip for the process verification. In this paper, by combining Area Inspection SEM (AI-SEM) with large Field Of View (FOV) and Die-to-Database-base (D2DB) technologies, we show a comprehensive solution for fast inspection and precise massive CD measurement of EUV characterized features, such as After Development Inspection (ADI) hole pattern, and aperiodic 2D Logic pattern. Also, a big data analysis consisting of multiple CD indices output by AI-SEM, a new process window by multivariable analysis is discussed. Furthermore, Machine Learning (ML) -based inspection and metrology to maximize imaging speed, is also reported.