Effect of oxygen on the properties of Ga_2O_3:Si thin films

机译：氧对Ga_2O_3的性能的影响：Si薄膜

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The results of studies of electrical and gas-sensitive characteristics of thin films Ga_2O_3:Si on exposure to oxygen in the range from 0 to 100 vol. % and operating temperatures from 25 to 700 °C were presented. Samples were obtained by HF magnetron sputtering. The possibility of developing low-temperature oxygen sensors was shown. A model of oxygen interaction with Ga_2O_3:Si films was proposed. The mechanism of Si influence on gas-sensitive properties of thin films of gallium oxide was proposed.

机译：薄膜的电气和气体敏感特性研究的结果Ga_2O_3：Si在0至100 Vol的范围内暴露于氧气。提出了25至700°C的％和工作温度。通过HF磁控溅射获得样品。显示了开发低温氧传感器的可能性。提出了一种与GA_2O_3的氧相互作用模型：提出了Si薄膜。提出了Si对氧化镓薄膜气敏性质的影响。

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《International School and Conference "Saint Petersburg OPEN"》|2020年|p595-1199|共5页
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A V Almaev; E V Chernikov; B O Kushnarev; N N Yakovlev;
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中图分类计量学;
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4. Effect of oxygen on the properties of Ga_2O_3:Si thin films [C] . A V Almaev, E V Chernikov, B O Kushnarev, International School and Conference "Saint Petersburg OPEN" . 2020

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Effect of oxygen on the properties of Ga_2O_3:Si thin films

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