Design and investigation of GaPAsN/Si light-emitting diode

摘要

The heterostructure of light-emitting diode on a silicon substrate with an active region based on A3B5N was synthesized and investigated. Light-emitting diode demonstrates effective electroluminescence at 645 nm up to the 360 K. This indicates the high crystalline and optical quality of the light-emitting structure, as well as the prospects of this approach for the development of silicon integrated photonics.