Prediction of an order of magnitude for electron and hole mobilities using ID simulations

摘要

Organic photovoltaics has attracted much effort and many research groups during the past decade, because of low-cost and easy fabrication techniques. Despite the great progress that has been achieved in increasing the conversion efficiencies of the devices, there are still several problems to be solved to make the solar cells commercially viable, especially for cells based on bulk heterojunctions. The purpose of this work is to supply techniques for predicting the order of magnitude of the charge carrier mobilities of bulk heterojunction devices, on the basis of easy-to-perform measurements for experimentalists. A one dimensional model of a bulk heterojunction cell was used, and then simulations were performed in order to obtain the photocurrent as a function of an effective applied voltage. Plotted in a double logarithmic scale, the resulting curves exhibit different signatures depending on the mobilities of the charge carriers. These signatures could be helpful for experimentalists in order to predict an order of magnitude for both the electron mobility and the hole mobility.