Cascode Stage Based LNA for Bluetooth Applications in 45 nm CMOS Technology

摘要

A highly linear, low noise amplifier (LNA) with cascode topology is presented in this work. The proposed circuit is designed in 45 nm TSMC CMOS technology. The linearity factor is improved with an inter modulation distortion (IMD) technique. The band of operation is around the 2.45 GHz frequency, designed for Bluetooth application prospects. The circuit exhibits a power gain, |S_(21)|, of 14.1 dB and input return loss, |S_(11)|, of -18.35 dB. The LNA has a Noise Figure (NF) of 1.42 dB and 1 dB compression point of -9.87 dBm and a power dissipation of 1.98 mW from a 1 V power supply.