Under different growth conditions, silicon nitride (SiNx) thin films were deposited successfully on Si(100) substrates and glass substrates by plasma enhanced chemical vapor deposition (PECVD). The thickness, refractive index and growth rate of the thin films were tested by ellipsometer. The surface morphologies of the thin films were investigated using atomic force microscope (AFM). The average transmittance in the visible region was over 90%.
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