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Effects of Substrate Temperature on the Properties of Silicon Nitride Films by PECVD

机译：衬底温度对pECVD制备氮化硅薄膜性能的影响

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Chunya Lia; Xifeng Lib; Longlong Chenc; Jifeng Shid; Jianhua Zhange;
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1. Low-temperature deposition of nanocrystalline diamond films on silicon nitride substrates using distributed antenna array PECVD system [J] . Benoit Baudrillart, Fabien Benedic, Amel S. Melouani, Physica status solidi . 2016,第10期

机译：使用分布式天线阵列PECVD系统在氮化硅衬底上低温沉积纳米晶金刚石膜
2. Duty ratio-controlled reflective property of silicon nitride films deposited at room temperature using a pulsed-PECVD at SiH_4-NH _3 plasma [J] . Lee S., Kim B., Kang B.J., Current applied physics: the official journal of the Korean Physical Society . 2011,第Suppla1期

机译：在室温下使用脉冲PECVD在SiH_4-NH _3等离子体下沉积的氮化硅膜的占空比控制反射特性
3. Effect of deposition conditions on mechanical properties of low-temperature PECVD silicon nitride films [J] . H. Huang, K.J. Winchester, A. Suvorova, Materials Science and Engineering. A, Structural Materials: Properties, Microstructure and Processing . 2006,第Nov期

机译：沉积条件对低温PECVD氮化硅膜力学性能的影响
4. Effects of Substrate Temperature on the Properties of Silicon Nitride Films by PECVD [C] . Chunya Li, Xifeng Li, Longlong Chen Workshop on Inorganic Thin Films and Coatings . 2013

机译：基材温度对PECVD氮化硅膜性能的影响
5. Effect of post-deposition implantation and annealing on the properties of PECVD deposited silicon-nitride films [D] . Shams, Qamar Ahmad 1988

机译：沉积后注入和退火对PECVD沉积氮化硅膜性能的影响
6. Effect of Sample Elevation in Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD) Reactor on Optical Properties and Deposition Rate of Silicon Nitride Thin Films [O] . Mateusz Œmietana, Robert Mroczyński, Norbert Kwietniewski 2014

机译：射频等离子体增强化学气相沉积（RF PECVD）反应器中样品高度对氮化硅薄膜光学性能和沉积速率的影响
7. Effect of deposition conditions on mechanical properties of low-temperature PECVD silicon nitride films [O] . Huang, H., Winchester, K. J., Suvorova, A., 2006

机译：沉积条件对低温pECVD氮化硅薄膜力学性能的影响

Effects of Substrate Temperature on the Properties of Silicon Nitride Films by PECVD

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