Electrostatic Charges and Ion Implantation Impact on the MIS Transistors Parameters Degradation

摘要

Resistance to electrostatic charges is one of the most important problems limiting the very large scale integrated circuits reliability. Increased currents cause the degradation of the instruments characteristics, similar to the degradation that occurs when hot electrons stream passes through. In order to increase the very large scale integrated circuits reliability, under hot electrons occurrence, exposure to ionizing radiation, electrostatic charges, and ion treatment, it is necessary to study the MIS transistors parameters degradation mechanisms. The results of the study show that the maximum the threshold voltage shift occurs when aluminum is sprayed onto the structure with a floating gate. The reason for the MIS transistors characteristics degradation is the charges of the gate electrode and the current in the oxide arising from strong electric fields. The degree of characteristics degradation in the hot electrons injection case does not depend on the energy of the ions bombarding the substrate surface.