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机译:高κ门电介质和其他物理参数对长通道门 - 全纳米线晶体管静电和阈值电压的影响
Bangladesh Univ Engn & Technol Dept Elect & Elect Engn Dhaka 1000 Bangladesh;
Bangladesh Univ Engn & Technol Dept Elect & Elect Engn Dhaka 1000 Bangladesh;
Bangladesh Univ Engn & Technol Dept Elect & Elect Engn Dhaka 1000 Bangladesh;
Bangladesh Univ Engn & Technol Dept Elect & Elect Engn Dhaka 1000 Bangladesh;
Bangladesh Univ Engn & Technol Dept Elect & Elect Engn Dhaka 1000 Bangladesh;
Bangladesh Univ Engn & Technol Dept Elect & Elect Engn Dhaka 1000 Bangladesh;
III-V GAA MOSFET; self-consistent Schrodinger-Poisson solver; electrostatics; threshold voltage model; high- dielectric; physical parameter variation;
机译:纳米金属晶粒随机数和位置对硅栅全纳米线N型金属氧化物半导体场效应晶体管的阈值电压变性
机译:磁场对超薄硅栅极纳米线场效应晶体管阈值电压的影响
机译:具有肖特基势垒源/漏的全栅硅纳米线晶体管的物理局限性和静电改善的研究
机译:栅极全能无结纳米线晶体管的量子力学阈值电压的自洽确定
机译:短沟道效应抑制和处理双栅极 - 全面Si纳米线晶体管中的过程变异性
机译:静电放电应力作用下的全栅硅纳米线场效应晶体管的退化机理–一种建模方法
机译:通道几何依赖性阈值电压和跨导的栅极 - 全面纳米内纳米内连接晶体管