The dielectric response and electronic properties of GaS monolayer: A first-principles study

摘要

In the present work, we study the electronic structure and optical properties of gallium-sulphide (GaS) monolayer using density functional theory. It is found that GaS monolayer is an indirect bandgap semiconductor with bandgap of 2.58 eV. Optical parameters such as real and imaginary part of dielectric functions, extinction coefficient, refractive index, absorption spectrum, reflectivity, energy loss spectra and optical conductivity of GaS monolayer are calculated within random phase approximation which includes the local field effects at Hartree level. The calculated electronic and optical results suggest that GaS monolayer can have potential applications in nanoelectronic and nanophotonic device.