机译:Ⅲ-Ⅵ族单层MX(M = Ga,In; X = S,Se)的电子,光学和热传输性质的第一性原理研究
Northeastern Univ, Minist Educ, Key Lab Electromagnet Proc Mat, Shenyang 110819, Liaoning, Peoples R China|Nanjing Univ, Coll Engn & Appl Sci, Nanjing 210023, Jiangsu, Peoples R China;
Univ South Carolina, Dept Mech Engn, Columbia, SC 29209 USA;
Shandong Univ, Sch Energy & Power Engn, Qingdao 266237, Shandong, Peoples R China;
Zhengzhou Univ, Int Lab Quantum Funct Mat Henan, Zhengzhou 450001, Henan, Peoples R China|Zhengzhou Univ, Sch Phys & Engn, Zhengzhou 450001, Henan, Peoples R China;
Nanjing Univ, Coll Engn & Appl Sci, Nanjing 210023, Jiangsu, Peoples R China;
Northeastern Univ, Minist Educ, Key Lab Electromagnet Proc Mat, Shenyang 110819, Liaoning, Peoples R China;
Univ South Carolina, Dept Mech Engn, Columbia, SC 29209 USA;
机译:第一原理研究Ⅲ-ⅵ单层MX(M = Ga,IN; x = S,SE)的电子,光学和热传输性能研究
机译:通过第一原理研究在Janus Monolayer PTSSE中的电子结构,光学特性和声子运输
机译:单层α-和β-GeSe的电子,光学和传输性质的第一性原理研究
机译:气体单层的介质响应和电子性质:一项研究
机译:GaN,ZnO和(GaN)1-x(ZnO)x的结构,电子和光学性质的第一性原理研究。
机译:MgZnO单层的相稳定性电子结构和光学性质的第一性原理研究
机译:单层的电子,传输和光学特性$ \ alpha $和 $ \ beta- $ Gese:第一原则研究