The Influence of the Distance between the Strike Location and the Drain on 90nm Dual-Well Bulk CMOS

摘要

Based on the 3D TACD simulation, by building and simulating 90nm dual-well CMOS device under heavy ion radiation with different distance between strike position and the drain, researching the influence to NMOS, PMOS, SRAM threshold LET and the critical charge. For NMOS, with the increase of the distance, bipolar amplification effect will reduce influence even make no difference. The situation in PMOS is as same as the condition of a directly strike on drain, and the bipolar amplification effect increases the charge collection efficiency. Meanwhile, as the distance increases, the threshold LET and the critical charge of SRAM while increase.