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Fabrication of 2D TiO_2 Nanopatterns by Plasma Colloidal Lithography

机译:等离子体胶合光刻制备2D TiO_2纳米图案

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The present study investigates the capability of plasma colloidal lithography technique consisting on three fabrication steps, colloidal mask deposition, thin film deposition with colloidal masks and colloidal mask lift off, to fabricate 2D patterns of TiO_2 on silicon substrate. For the plasma assisted thin film deposition step, we used reactive high power impulse magnetron sputtering, a technique known to yield highly compact thin films with good control of composition and crystallinity. The fabricated 2D nanopatterns were investigated by atomic force microscopy and scanning force microscopy. Highly ordered 2D crystal array of TiO_2 triangular islands with the maximum height of about 10 nm were obtained independently of the TiO_2 thin film deposition time (thickness). The relatively low value of TiO_2 pattern height is explained by the shadow effects of the mask, a large number of particles from the gas phase contributing on the film deposited on the mask, until complete filling of the void spaces between nanoparticles of the mask.
机译:本研究研究了三种制造步骤,胶体掩模沉积,薄膜沉积与胶体面罩和胶体掩模升降机组成的等离子体胶体光刻技术的能力,以制造硅衬底上的TiO_2的2D图案。对于等离子体辅助薄膜沉积步骤,我们使用反应性高功率脉冲磁控溅射,该技术已知产生高度紧凑的薄膜,具有良好的组成和结晶度。通过原子力显微镜和扫描力显微镜研究制造的2D纳米图。具有最大高度约为10nm的TiO_2三角岛的高度有序的2D晶体阵列是独立于TiO_2薄膜沉积时间(厚度)而获得的。通过掩模的阴影效应,来自沉积在掩模上的膜的气相的大量颗粒,直到在掩模上的薄膜之间的薄膜延伸的大量颗粒来解释,直到掩模的纳米颗粒之间的空隙空间完全填充掩模的空隙空间的大量粒子。

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