首页> 外文会议>International Conference on Condensed Matter and Applied Physics >Optical Properties of an Indium Doped CdSe Nanocrystal: A Density Functional Approach
【24h】

Optical Properties of an Indium Doped CdSe Nanocrystal: A Density Functional Approach

机译:掺杂铟CdSe纳米晶体的光学性质:密度函数方法

获取原文

摘要

We have studied the electronic and optical properties of a CdSe nanocrystal doped with n-type impurity atom. First principle calculations of the CdSe nanocrystal based on the density functional theory (DFT), as implemented in the Vienna Ab Initio Simulation Package (VASP) was used in the calculations. We have introduced a single Indium impurity atom into CdSe nanocrystal with 1.3 nm diameter. Nanocrystal surface dangling bonds are passivated with hydrogen atom. The band-structure, density of states and absorption spectra of the doped and undopted nanocrystals were discussed. Inclusion of the n-type impurity atom introduces an additional electron in conduction band, and significantly alters the electronic and optical properties of undoped CdSe nanocrystal. Indium doped CdSe nannocrystal have potential applications in optoelectronic devices.
机译:我们研究了掺杂有n型杂质原子的CDSE纳米晶体的电子和光学性质。基于密度泛函理论(DFT)的CDSE纳米晶体的第一个原理计算,如维也纳AB初步仿真包(VASP)中所实施的计算。我们已经将单一铟杂质原子引入CdSe纳米晶,直径为1.3nm。纳米晶体表面悬挂键与氢原子钝化。讨论了掺杂和未透过纳米晶体的带状结构,状态和吸收光谱。包含n型杂质原子在导带中引入额外的电子,并且显着改变了未掺杂的CdSe纳米晶体的电子和光学性质。铟掺杂Cdse NannoCrystal在光电器件中具有潜在的应用。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号