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Effect of Dilute Magnetic ions on the Optical, Dielectric and Ferroelectric properties of PZT at Morphotopic Phase Boundary

机译:稀磁离子对Morphotop期边界PZT光学,电介质和铁电特性的影响

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Modified-PZT ceramics with a formula Pb_(0.9)Ni_(0.1)[(Zr_(0.52)Ti_(0.48))]_(1-x)Sn_xO3 located near the morphotropic phase boundary (MPB) were prepared by conventional solid state process to investigate effects of dilute doping of Ni and Sn in different sites of PZT. The single phase structure of the series of samples has been identified by x-ray diffraction technique. The optical band gap has been obtained from the UV-Vis spectra and found to be shrinkage with doping. The detail dielectric and impedance studies are being carried out to investigate the conduction mechanism of the samples. A significant enhancement in the electric polarization is observed for the maximum Sn doping in a modified PZT.
机译:具有公式PB_(0.9)Ni_(0.1)[(Zr_(0.52)Ti_(0.48))] _(1-x)SN_O3,位于Morphothic相位边界(MPB)附近的Zr_(0.52))] _(1-x)SN_O3通过常规固态态方法制备探讨PZT不同位点Ni和Sn的稀释掺杂的影响。通过X射线衍射技术鉴定了一系列样品的单相结构。光带隙已经从UV-Vis光谱获得,发现掺杂为收缩。正在进行细节介电和阻抗研究以研究样品的传导机理。对于改性PZT中的最大Sn掺杂,观察到电极极化的显着增强。

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