Electrical properties of solution processed Cu_2ZnSnS_4 (CZTS) compound semiconductor thin film structures on molybdenum (Mo) coated glass substrates are investigated using Mott-Schottky and Impedance spectroscopy measurements at room temperature. These measurements are carried out in sodium sulfate (Na_2SO_4) electrolytic medium at pH~ 9.5. The inversion/depletion/accumulation regions are clearly observed in CZTS semiconductor -Na_2SO_4 electrolyte interface and measured flat band potential is ~ -0.27 V for CZTS thin film electrode. The positive slope of the depletion region confirms the intrinsic p-type characteristics of CZTS thinfilms with~ 2.5 x 10~(19) holes/m~3. The high frequency impedance measurements showed ~ 30 Ohm electrolyte resistance for the investigated configuration.
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