Design and characterization of high-speed CMOS pseudo-LVDS transceivers

摘要

High-speed transceiver for on-board systems of data collection and processing need to meet additional requirements, such as low power consumption and increased radiation hardness. It is therefore necessary to compare and search for alternative variants of transceivers on the physical layer, where high transfer speed is not achieved at the cost of a significant increase in power consumption or a limitation of transmission distance by the size of a printed circuit board. For on-board applications, it is also necessary to solve the problem of increasing the radiation hardness without going to expensive types of technology. In this paper, we studied some variants of implementation of pseudo-LVDS transceivers and analyzed their achievable quantitative characteristics. According to the results of calculations and analysis of the literature, specialized transceivers of this type, intended for the manufacture or manufactured according to the bulk CMOS technology processes in the range of 250-80 nm. can provide data speeds up to 6 Gbps at a specific power consumption of less than 4 mW/Gbps.