Effects of selenization conditions on the properties of Cu-In-Ga-Se thin films prepared by Pulsed laser deposition

摘要

In this paper, Pulsed laser deposition (PLD) is attempted to be an alternative synthesis method for Cu-Ga-In (CIGS) thin films. Cu-In-Ga prefabricated metal films were grown on the quartz substrates by PLD method. Then the CIGS films with different Se content were synthesized by the post-selenization(Se)-annealing processes. The structure, element component proportion and optical properties of the CIGS films were investigated. The experimental results indicate that the CIGS films can be well obtained by the PLD method with Se-annealing. The performances of the CIGS films are much affect by the Se-annealing processes, including Se-annealing temperature, annealing time, and the way of Se-annealing. The CIGS films prepared by PLD method with Se-annealing present fine visible light absorption properties.