Properties of Boron Doped Amorphous Carbon Films at -30V and -50 V for Carbon Based Solar Cell Applications

摘要

The a-C:B film were prepared by mixing vapor of hydrocarbon palm oil, boron dopant, carrier gas, and argon in the chamber deposited at -30 V and -50 V of negative bias voltage. The effect of these negative bias voltage on the thickness, electrical and electronic properties of a-C:B film were investigated. It was observed, the optical band gap slightly changed (2.0 eV to 2.04 eV). The fabricated solar cell with the configuration of Au/p-C:B/n-Si/Au achieved conversion efficiency (η)of 0.192% at applied bias voltage of -50 V. This result showed by the applied of negative bias voltage can controlled the interstitial doping of boron in the amorphous carbon films network.