Results are presented for the silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) fabricated based on in-house SiC epitaxial wafer suitable for power devices. We have demonstrated continuous improvement in blocking voltage, forward drain current under high temperature. The SiC VJFET device's current density is 360 A/cm~2 and current is 11 A at V_G= 3 V and V_D = 2 V, with related specific on-resistance 5.5 mΩ·cm~2. The device exceeds 1200 V at gate bias V_G = - 10V. The current of the SiC VJFET device is 4 A and the reverse voltage is 1200V at the 200°C high temperature.
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机译：基于内部SiC外延晶片制造的碳化硅（SiC）垂直通道结场效果晶体管（VJFET）呈现出适用于电力装置的内部SiC外延晶片。我们已经证明了堵塞电压，高温下的漏极电流的持续改进。 SiC VJFET器件的电流密度为360A / cm〜2，电流为11a，在V_G = 3 V和V_D = 2 V，相关特定的导通电阻5.5MΩ·cm〜2。该装置以栅极偏压V_G = - 10V超过1200V。 SiC VJFET器件的电流为4a，反向电压在200℃的高温下为1200V。
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