ANALYSIS AND SIMULATION OF DUAL METAL DOUBLE GATE SON MOSFET USING HAFNIUM DIOXIDE FOR BETTER PERFORMANCE

摘要

Advancement of semiconductor device in sub 45 nm range has led to lots of development in device area, but it also raises some critical issues. One of such an issues is related to silicon dioxide layer which starts breakdown once its thickness is around 2nm range due to gate leakage current. In this paper, we try to overcome this problem by replacing the front gate silicon dioxide dielectric layer of dual material double gate silicon on nothing MOSFET by high k dielectric material layer, hafnium dioxide. This paper gives an analysis of the important parameter of semiconductor device such as threshold voltage and surface potential changes with change of dielectric layer to Hafnium dioxide from conventional silicon dioxide. The results are validated in ATLAS 2D simulation tools.