Random Dopant Fluctuation in 10-nm-Gate Multi-Channel Gate-All-Around Nanowire Field Effect Transistors

摘要

This paper, for the first time, studies the random dopant fluctuation (RDF) in the 10-nm-gate multi-channel gate-all-around nanowire field-effect transistors (FETs). A 3D statistically "atomistic" device simulation approach to analyzing random-dopant effects is intensively performed to study device's physical and electrical characteristic fluctuation. The key findings of this study indicate an ellipse-shaped gate-all-around nanowire FETs with relatively smaller aspect ratio of radius possess better DC characteristic, suppression of short-channel effect, and immunity to RDF, compared with large aspect ration one.