NQS Modeling of Independent DG MOSFET by Relaxation Time Approximation Approach

摘要

In this paper, we investigate the applicability of the Relaxation Time Approximation (RTA) based approach for the NQS modeling of independent double gate (IDG) MOSFET, which is a non-trivial exercise due to the anomalous inter-gate transcapacitance frequency response. We model the NQS effect in an IDG MOSFET by employing the RTA based approach along with the novel piecewise linearization methodology and validate the model against the TCAD simulation for different bias conditions. Proposed model predicts the NQS behavior accurately for any amount of gate oxide thickness asymmetry for a frequency range 2f_t in saturation and 10ft in linear region (where f_t is the cutoff frequency) and successfully reproduce the anomalous frequency dependency of the inter-gate transcapacitances. The model is also successfully implemented in a professional circuit simulator through Verilog-A interface and good convergence is observed during different standard circuit simulation.