Dense chains of stacked quantum dots in Ge/Si heterostructures

摘要

Growth and characterization of Ge/Si(001)heterostructures with dense chains of stacked Ge quantum dots are reported. Ge hut nucleation and growth at low temperatures is discussed on the basis of results obtained by high resolution scanning tunneling microscopy and in-situ reflected high-energy electron diffraction. Atomic-level models of nucleating and growing huts are proposed. Data of high resolution transmission electron microscopy are presented focusing on long chains of Ge quantum dots. New photovoltaic quantum dot infrared photodetectors are proposed.