Study of the Growth of Graphene Film on Ni and Si Substrates by Hot Filament Chemical Vapor Deposition

摘要

Graphene films were prepared on Ni and heavily doped Si substrates simultaneously by hot filament chemical vapor deposition. Films were prepared at two sets of parameters: at 3 mbar process pressure, 600 °C substrate temperature and also at 2 mbar process pressure, 800 °C substrate temperature. Field emission scanning electron microscopy images show vertical growth of graphene films on Si substrates and planer growth on Ni substrates. Raman spectroscopy was used to study the phonon modes on the prepared films. The observed intensity ratio of I_D/I_G ~0.1 and I_G/I_(2D) ~2.5 in films grown on Ni substrate indicates the formation of more than 10-15 layers of defect free graphene films.