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Effect Of Dysprosium Doping On Structural, Dielectric And Ferroelectric Properties Of PLZT (65/35) Ceramics

机译:镝掺杂对PLZT(65/35)陶瓷结构,介电和铁电性能的影响

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Dy modified polycrystalline PLZT (65/35) i.e. Pb_(0.92-x)La_(0.08)Dy_x(Zr_(0.65)Ti_(0.35))_(1-x/4)O3 materials were synthesized by solid state reaction technique. X-ray pattern of compounds confirmed the formation of single rhombohedral phase. Detailed dielectric studies of the compounds as a function of temperature shows that broadening of permittivity peak and transition temperature depends on Dy~(3+) ions concentration. Analysis of Diffuseness () of the broadened dielectric peaks of materials gave its value between 1 & 2, indicating the different degree of substitutional disorder in the system. The transition temperature (T_c) was found to shift towards lower temperature by 40°C with Dy concentration. The P-E loop measurement at room temperature confirms the ferroelectric behavior.
机译:通过固态反应技术合成DY改性多晶PLZT(65/35),即Pb_(0.92-x)La_(0.08)Dy_x(0.08)Dy_x(Zr_(0.65)Ti_(0.35))_(1-X / 4)O3材料。化合物的X射线图案证实了单一菱形相的形成。作为温度函数的化合物的详细介电研究表明,渗透峰和转变温度的扩展取决于Dy〜(3+)离子浓度。宽泛的材料的扩散峰值分析在1和2之间产生了值,表明系统中的不同程度障碍。发现过渡温度(T_C)与DY浓度将40℃升高到较低温度。室温下的P-E环测量证实了铁电行为。

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