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Properties of ZnO nanorods arrays growth via low temperature hydrothermal reaction

机译:通过低温水热反应ZnO纳米座阵列阵列生长的性质

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This work describes properties of 1-D ZnO nanorods arrays growth using low temperature hydrothermal method on a seeded substrate. The properties of ZnO seed were studied by varying thermal oxidation temperature from 250-450°C. The formation of ZnO nanorods was studied by varying the growth time during hydrothermal process. The optimum oxidation temperature to produce seeded ZnO template was 400°C. The formation of ZnO nanorods was further studied by varying hydrothermal reaction growth time from 1 to 24 hours. The optimum hydrothermal growth time of 4 hours produced blunt tip-like nanorods with length of ~735 nm and top diameter of ~66 nm. I-V characteristics of ZnO nanorods photodetector in dark, ambient light and UV light were also studied. The change in the photoconductivity under UV illumination was found to be 1 order of magnitude higher compared to dark and ambient light. With an incident wavelength of 370 nm and applied bias of 3V, the responsivity of photodetector was 5.0 mA/W, which was higher compared to other reported works. The increase of photosensitivity indicated that the produced ZnO nanorods were suitable for UV photodetector applications.
机译:该工作描述了使用低温水热法在接种基板上的1-D ZnO纳米棒阵列生长的性质。通过从250-450℃的热氧化温度改变热氧化温度来研究ZnO种子的性质。通过改变水热过程期间的生长时间来研究ZnO纳米棒的形成。产生种子ZnO模板的最佳氧化温度为400℃。通过从1至24小时的水热反应生长时间改变水热反应生长时间,进一步研究ZnO纳米棒的形成。 4小时的最佳水热生长时间产生钝的尖端状纳米棒,其长度为约735nm,顶部直径为〜66nm。还研究了ZnO Nanorods光电探测器的I-V特性,但环境光和紫外线光。与暗和环境光相比,发现UV照明下的光电导性的变化是1的1级。入射波长为370nm并施加3V的偏差,光电探测器的响应性为5.0 mA / W,与其他报告的作品相比较高。光敏性的增加表明,所产生的ZnO纳米棒适用于UV光电探测器应用。

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