Low temperature growth of patterned ZnO nanowires and their field emission characteristics

摘要

Uniformly distributed and quasi-perpendicular patterned ZnO nanowires were synthesized on Ag electrodes coated Si substrate by thermal evaporation. Field emission (FE) measurements show that its turn-on field is 3.65V/μm at current density of 10μA/cm2 and its the threshold field at current density of lmA/cm2 is about 6.56 V/μm at an emitter-anode gap of 400μm. and the fluctuation of FE current density is smaller than 10% for 3.5h at electric field of 6V/μm. The low turn-on field and good stability indicates that it offers advantages as field emitter for much potential application.