An ultra wide-band low-noise amplifier: Design and simulation using ED02AH and RFCMOS 0.18 #x00B5;m technologies

摘要

The design and simulation of a wide-band RF amplifier has been presented. In this study, the design of one-stage and two-stage amplifier is investigated respectively under two types of technologies: ED02AH and RFCMOS 0.18 µm. We proposed the design of an amplifier in which its noise figure is better than 5 dB and its gain is more than 10 dB. In addition, input and output impedance matching and frequency stability from 2.5 to 30.5 GHz are considered simultaneously. The presented paper intended to achieve suitable gain, noise figure, and power consumption in the band of 2.5 GHz to 30.5 GHz utilizing the least elements.