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Dark current measurements in a CMOS imager

机译:CMOS成像仪中的暗电流测量

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摘要

We present data for the dark current of a commercially available CMOS image sensor for different gain settings and bias offsets over the temperature range of 295 to 340 K and exposure times of 0 to 500 ms. The analysis of hot pixels shows two different sources of dark current. One source results in hot pixels with high but constant count for exposure times smaller than the frame time. Other hot pixels exhibit a linear increase with exposure time. We discuss how these hot pixels can be used to calculate the dark current for all pixels. Finally, we show that for low bias settings with universally zero counts for the dark frame one still needs to correct for dark current. The correction of thermal noise can therefore result in dark frames with negative pixel values. We show how one can calculate dark frames with negative pixel count.
机译:我们向不同增益设置的商业上可用CMOS图像传感器的暗电流提供数据,并且在295至340k的温度范围内的偏置偏移和0至500ms的曝光时间。热像素的分析显示了两个不同的暗电流源。一个源导致具有高但恒定计数的热像素,用于小于帧时间的曝光时间。其他热像素具有曝光时间的线性增加。我们讨论这些热像素如何用于计算所有像素的暗电流。最后,我们表明,对于带有普遍零计数的低偏置设置,暗框仍需要校正暗电流。因此,热噪声的校正可以导致具有负像素值的暗帧。我们展示了如何计算具有负像素计数的黑暗帧。

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