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Dark current measurements in a CMOS imager

机译:CMOS成像器中的暗电流测量

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摘要

We present data for the dark current of a commercially available CMOS image sensor for different gain settings and bias offsets over the temperature range of 295 to 340 K and exposure times of 0 to 500 ms. The analysis of hot pixels shows two different sources of dark current. One source results in hot pixels with high but constant count for exposure times smaller than the frame time. Other hot pixels exhibit a linear increase with exposure time. We discuss how these hot pixels can be used to calculate the dark current for all pixels. Finally, we show that for low bias settings with universally zero counts for the dark frame one still needs to correct for dark current. The correction of thermal noise can therefore result in dark frames with negative pixel values. We show how one can calculate dark frames with negative pixel count.
机译:我们提供了市售CMOS图像传感器在295至340 K的温度范围内以及0至500 ms的曝光时间下具有不同增益设置和偏置偏移的暗电流数据。对热像素的分析显示了两种不同的暗电流源。一个源导致热像素的曝光时间比帧时间短,但像素计数高但恒定。其他热像素随曝光时间呈线性增加。我们讨论了如何使用这些热像素来计算所有像素的暗电流。最后,我们表明,对于低偏置设置,暗帧的计数通常为零,仍然需要校正暗电流。因此,热噪声的校正会导致像素值为负的暗帧。我们展示了如何计算像素数为负的暗帧。

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