Analysis of Total Dose-Induced Dark Current in CMOS Image Sensors From Interface State and Trapped Charge Density Measurements

摘要

The origin of total ionizing dose induced dark current in CMOS image sensors is investigated by comparing dark current measurements to interface state density and trapped charge density measurements. Two types of photodiode and several thick-oxide-FETs were manufactured using a 0.18-$mu$m CMOS image sensor process and exposed to 10-keV X-ray from 3 krad to 1 Mrad. It is shown that the radiation induced trapped charge extends the space charge region at the oxide interface, leading to an enhancement of interface state SRH generation current. Isochronal annealing tests show that STI interface states anneal out at temperature lower than 100 $^{circ}$C whereas about a third of the trapped charge remains after 30 min at 300 $^{circ}$ C.