CMOS image sensor with improved charge transference and dark current characteristics and the mehtod for fabricating thereof

摘要

PURPOSE: An image sensor and a method for manufacturing the same are provided to improve charge transfer efficiency and dark current by changing the doping profile of a p0 ion-implanted region. CONSTITUTION: A field oxide layer(22) is locally formed on a semiconductor layer(21). A gate(24) of a transfer transistor and a gate spacer(25) are formed on the semiconductor layer. A deep n- ion-implanted region(23) is formed in the semiconductor layer to align one side of the field insulating layer and the gate. A p0 ion-implanted region(26) is formed between the surface of the semiconductor layer and the deep ion-implantation region(23) to align the edge of the field insulating layer and the gate spacer. At this time, the dose of the p0 ion-implanted region(26) is gradually large to the direction of edge of the field insulating layer.