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Phonon Overheating in Quantum Dots: Low Electronic Densities

机译:Quantum Dots过热的声音:低电子密度

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The electronic coupling to the longitudinal optical phonons has been recently used to interpret theoretically the electronic energy relaxation in quantum dots. In this theory the LO phonon modes served as a reservoir, on which the electron executes multiple scattering acts. Quite reasonably such a phonon subsystem is expected to be passive, namely, in a long-time limit of development, the whole system should be able to achieve such a stationary state, in which the statistical distributions of both subsystems, electron and phonons, do not change in time. We remind briefly that the recent approach to the relaxation in quantum dots has led to a non-passivity of such a reservoir. We remind as well the method of a partial elimination of the phonon overheating effect by using the Lang-Firsov transformation. Then we apply such a modified relaxation theory to the electronic relaxation at low electronic densities in quantum dots and come to conclusions concerning the role of e-LO scattering mechanism. We show that the modified theory of relaxation gives a plausible dependence of relaxation rate on temperature of sample. We also come to conclusions that at low levels of electronic excitation of quantum dot sample the electron-LO phonon mechanism can become relatively weak with respect to other relaxation mechanisms not supporting the electronic up-conversion effect.
机译:最近已经使用与纵向光学声子的电子耦合在理论上解释量子点中的电子能量松弛。在本文中,LO声子模式用作储存器,其中电子执行多个散射作用。相当合理地这样的声音子系统预计将被动,即在长期的发展限制中,整个系统应该能够实现这样的静止状态,其中子系统,电子和声子的统计分布呢没有时间变化。我们简单地提醒,最近在量子点中放松的方法导致了这种储层的不叠加。我们也提醒了通过使用Lang-Firsov变换来部分消除声子过热效果的方法。然后,我们将这种修改的放松理论应用于量子点低电子密度的电子放松,并得出关于E-LO散射机制的作用的结论。我们表明改进的放松理论为放松率的粘附依赖性依赖于样品温度。我们还得出结论,在量子点样品的低水平的电子激发下,对于不支持电子上转换效果的其他松弛机制,电子-LoL个子机构可以相对较弱。

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