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Effect of Site Selective Doping of Co on the Physical and Structural/Micro structural Properties of Bi-Based High Temperature Superconductors

机译:CO对基于BI基高温超导体物理和结构/微结构性能的现场选择性掺杂的影响

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Samples of Bi_(2)Sr_(2)CaCu_(2-x)Co_(x)O_(8+delta) (Bi-2212, x(velence)0.0 to 0.25) were synthesized by solid-state reaction route. The critical temperature (Tc) measured by standard four probe method has been found to depress from 80 K to 67K and transport current density (Jc) has been increased from 4.67 X 10~(2) to 3.52 X 10~(3) Acm~(-2) as Co content (x) increases from 0.00 to 0.25. The structural/micro-structural characteristics of the melt textured materials investigated by transmission electron microscopy (TEM) exhibit planar defects in local region of Co-doped Bi-2212 system. These planar defects may act as flux pinning centers. From the magnetic properties measurement of the samples, the ac susceptibility ((chi)_(ac)) was found to be -2 X 10~(-6) and the upper & lower critical magnetic field (Hc_(1) & Hc_(2)) values were found to be approx0.05T & 4.2T) respectively.
机译:通过固态反应途径合成Bi_(2)SR_(2)CACU_(2-X)CACU_(2-X)CO_(X)O_(8 +δ)(BI-2212,X(Velence)0.0至0.0至0.25)。已经发现通过标准四个探针方法测量的临界温度(TC)从80 k下降到67K,并且运输电流密度(JC)已从4.67×10〜(2)增加到3.52×10〜(3)ACM〜 (-2)作为CO含量(x)从0.00增加到0.25。通过透射电子显微镜(TEM)研究的熔体纹理材料的结构/微结构特征在掺杂的BI-2212系统的局部区域表现出平面缺陷。这些平面缺陷可以充当磁通钉扎中心。根据样品的磁性测量,发现AC敏感性((CHI)_(AC))为-2×10〜(-6)和上下临界磁场(HC_(1)和HC_( 2))发现值分别为约0.05T和4.2T)。

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