Modeling and Simulation of GaN/AlGaN Laser and Temperature Dependent Analysis of Physical Parameters

摘要

The computer aided simulation tools have been developed using static device modeling approach for the analysis and optimisation of various physical parameters of the semiconductor lasers. The optical field distribution in various layers across the device is obtained by solving the wave equation. The modal analysis of optical confinement in three Layer Slab Waveguide Structure is carried out to obtain the optimized set of structural parameters for maximum intensity at 375nm wavelength. The basic electrical equations have been implemented in discretized form and solved numerically to obtain the electrostatic potential and quasi Fermi potential at various nodes across the finite difference mesh of the device structure. The self consistent solution of basic electrical and optical equations has been obtained by iterative solution procedure. Recombination rates which have dependency on carrier concentration and recombination coefficient have been determined using various models at individual mesh points of the device. Temperature dependent analysis of recombination coefficient, band gap, refractive index, threshold current density, near field intensity, mirror loss in cavity, effective index has been carried out to explore applicability of nitride lasers at higher temperatures.