Advanced Metallizations for Sub-100 Nanometer Electronics

摘要

Electrodeposited copper is rapidli replacing aluminum in device interconnect technology because of its lower electrical resistivity; superior electromigration behavio, arid the ability to fill fine features iithout the formation of seams or voids. As feature dimensions go below 100 nm difficulties in maintaining performance are anticipated. In FY2002 we have pushed the quantitative limits of the Curvature Enhanced Accelerator Coverage (CEAC) mechanism developed in the Metallurgy Division of NIST Exploring the mechanism has wlded new electrochemical processing routes for improved metallization and is guiding the development of advanced mnetalhizalions beyond copper as well as new processing routes such as surfactant catalyzed chemical vapor deposition.