Advanced high-k dielectric amorphous LaGdO_3 based high density metal-insulator-metal capacitors with sub-nanometer capacitance equivalent thickness

摘要

Planar metal-insulator-metal (MIM) mono-dielectric layer stacks were fabricated using pulsed laser deposited thin films of high-k dielectric LaGdO_3. These stacks showed high capacitance density ～43.5 fF/μm~2 with sub-nanometer capacitance equivalent thicknesses of ～0.66nm, large breakdown field of ～6MV/cm, greater energy storage density of ～40J/cm~3, smaller voltage coefficient of capacitance, and lower dependence of it on layer thickness α∝d_(-1) and frequency. All these features make LaGdO_3 a material of interest for next generation MIM structures for radio frequency, analog/ mixed-signal, and dynamic random access memory applications.