Overview of Recent Progress of Semiconductor Power Devices based on Wide Bandgap Materials

摘要

Wide bandgap materials, which have shown superior material properties, such as better thermal conductivity and excellent electric performance, have aroused wide concern from scientists and engineers. Currently, research towards semiconductor power devices based on wide bandgap materials has made great achievements. The new developed WBG (wide bandgap) power devices, such as 1200V Direct-Driven SiC JFET power switch and highly reliable GaN MOS HFET displayed better performances and advantages, comparing to traditional Si based power devices. These power devices have been widely used in variety of applications with its successful commercialization, which convincingly proved their reliability and effectiveness. The usage of WBG power devices greatly improved the circuit performance, contributed to the evolve of the new generation electric products. In this paper, we mainly focus on introducing recent progresses and research results of several type of power devices based on WBG materials, including GaN, IGBT, JFET, MOSFET, rectifiers and their SiC counterparts. Their characteristics, performances and relevant applications will be discussed and compared respectively. Then, some deficiency and limits of these devices, as well as solutions of these defects will be illustrated. Finally, future developments and prospects of WBG power devices will be analyzed.