Light emission from Si avalanche mode LEDs as a function of E field control, impurity scattering, and carrier density balancing

摘要

Light emission in silicon LEDs that operate in the avalanche mode of operation, was analyzed by appropriate modelling, including the silicon energy band structure, available carrier energy spread, and available carrier momentum spread. These mechanisms play key roles in the realization of light emitting, using standard silicon processing procedures. The analyses indicate that appropriate doping and controlling the energized specifically electrons, carrier energy and carrier density by field manipulation, and controlling carrier momentum through appropriate impurity scattering technology, show great potential to enhance these emissions. Particularly, development work conducted on the p+np+ mono-silicon LED and the N+PN+PN+ Poly silicon LED show that field control, impurity and defect scattering and balancing the carrier type and carrier density has a profound influence on the optical emission intensity in Si AMLEDs. Furthermore, a much clearer understanding of the mechanisms responsible for optical emissions in Si Av LEDs has been obtained and can proceed with further improved device designs and applications.