High Performance Analysis of Hetero-Junction In_(1-x)Ga_xN/GaAs Solar Cell Using SCAPS

摘要

The group-Ⅲ nitride based semiconductors have proved their potential application in optoelectronic devices. The effects of layers thickness and doping on the photovoltaic cell parameters in p-In_(1-x)Ga_xN/i-GaAs/n-In_(1 _x)Ga_xN heterojunction solar cell have been investigated using solar cell capacitance simulator (SCAPS). The impacts of gallium (Ga) content, doping and thickness variation on the cell's output parameters were extensively simulated. In this work, the p and n-In_(1-x)Ga_xN band gap (E_g) are first defined and formulated as mathematical functions of gallium (Ga) content ("x"). Our numerical analysis highlights that the E_g value of 1.27 eV corresponding to × = 0.3 is optimal. Our results showed that the best structure must have a p-doped In_(0.7)Ga_(0.3)N layer, an active intrinsic GaAs layer, and n-doped In_(0.7)Ga_(0.3)N layer that have thicknesses of 0.15, 1.2 and 0.15 μm, respectively and doped with N_A = 10~(16) cm~(-3) and N_D = 10~(17) cm~(-3). Cells with these optimization results are found to give conversion efficiency of 25.88%.