Fabrication of Si_(1-x)Sn_x layer on Si substrate by Screen-Printing of Al-Sn paste

摘要

Single-crystalline Si_(1-x)Sn_x thick layers on large area Si substrates are fabricated by applying Al-Sn paste using conventional screen-printing process and high temperature treatment step. The impact of the Al and Sn ratio in the Al-Sn pastes are investigated. From the XRD patterns, the crystalline Si_(1-x)Sn_x peak has been detected and the Sn content in the Si_(1-x)Sn_x films is increased with increasing annealing temperature reaching approximately 0.35% at 900°C.