Properties of La_(0.75)Sr_(0.25)MnO_3 films grown on Si substrate with Si_(1-x)Ge_x and Si_(1-y)C_y buffer layers

摘要

The structural and electrical properties of La_(0.75)Sr_(0.25)MnO_3 (LSMO) film on Bi_4Ti_3O_(12) (BTO)/CeO_2/YSZ buffered Si_(1-x)Ge_x/Si (0.05 ≤ x ≤ 0.2 for compressive strain), blank Si, and Si_(1-y)C_y/Si (v=0 01 for tensile) were studied X-ray high resolution reciprocal lattice mapping (HRRLM) and atomic force microscopy (AFM) show that structural properties of LSMO and buffer oxide layers are strongly related to the strain induced by amount of Ge and C contents The RMS roughness of LSMO on Si_(1-x)Ge_x/Si has a tendency to increase with increasing of Ge content Electrical properties of LSMO film with Ge content up to 10% are slightly improved compared to blank Si whereas higher resistivity values were obtained for the samples with higher Ge content.