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Optical Investigations of In_2Se_(2.7)Sb_(0.3) Thin Films Prepared by Thermal Evaporation Technique

机译:IN_2SE_(2.7)SB_(0.3)薄膜通过热蒸发技术进行光学研究

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The III-VI compound semiconductors are important for the fabrication of ionizing radiation detectors, solid-state electrodes, and photosensitive heterostructures, solar cell as well as ionic batteries. In this paper, In_2Se_(2.7)Sb_(0.3) thin films have been grown by thermal evaporation technique onto a with chemically clean glass substrate. Amorphous nature of the films has been discovered by UV-VIS spectrophotometer. The analysis by absorption spectra within the spectral range 200nm-900 nm has been used for the optical characterization of thin films. From these data the optical constants (absorption coefficient (a), refractive index (η), extinction coefficient (k)) and optical band gap (Eg) are studied. The results were discussed, and reported in detail.
机译:III-VI化合物半导体对于制造电离辐射检测器,固态电极和光敏异质结构,太阳能电池以及离子电池是重要的。 在本文中,在具有化学清洁玻璃基板上的热蒸发技术中,通过热蒸发技术生长在_2se_(2.7)Sb_(0.3)薄膜。 UV-Vis分光光度计发现了薄膜的无定形性质。 频谱范围内的吸收光谱的分析已用于薄膜的光学表征。 从这些数据中,研究了光学常数(吸收系数(a),折射率(η),消光系数(k))和光带隙(例如)。 讨论了结果,并详细介绍。

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