Studies piezoresistive properties of n-type conductivity indium antimonide thin layers

摘要

Piezoresistive properties of undoped and doped by tellurium to different concentration InSb thin layers were investigated in wide range of strain (ε = ± 1.4 × 10^{-3rel. un.). The value of gauge factor is the largest for undoped n-type InSb thin layers and layers doped by concentration of (4 ÷ 7) × 1016cm-3. On the basis of such layers could be created strain gauges with high sensitivity. The n-type InSb thin layers under hydrostatic pressure up to 5000 bar were studied also. The coefficient of hydrostatic pressure is higher for undoped n-type InSb thin layers with majority concentration (2 + 3) × 1016cm-3, it equals K_h= (25 ÷ 27) × 10-5bar-1. These layers are perspective materials to design high sensitive pressure sensors.}