CERTAIN OPTICAL AND ELECTRICAL PROPERTIES OF THIN INDIUM ANTIMONIDE LAYERS,

摘要

This report describes a method of obtaining indium antimonide layers of n-type with a mobility of electrons of up to 8500sq cm/v. sec. Given are results of measuring the temperature dependence of electroconductivity,Hall constant and magneto resistances in the temperature range of from 140-550K,and also light permeability in the range of wave lengths of 0.7 - 8.1microns. It is shown,that the obtained layers can be used for the manufacture of Halls EMF sensing elements. (Author)